1. The VDMOS pure flat technology is similar to our childhood earthen houses, which hardly require excavation of the foundation. The pure flat architecture features high cost, strong avalanche, high internal resistance, and strong ESD ability, making it a pure power player.

The Trench process, commonly known as the latent trench process, is similar to our rural buildings that require excavation of the foundation to a certain depth. The same usage area requires less land, and compared to the flat process, the cost is slightly lower. With the same voltage platform, the internal resistance is slightly smaller, the current is large, the output capacity is strong, and the impact resistance is also weaker, combining speed and strength.

3. The SGT process, commonly known as the deep groove process, is similar to the high-rise buildings in cities nowadays, where the foundation needs to be excavated is particularly deep. Compared to the former, the internal resistance is extremely low, the cost is extremely low, and the current is particularly high. It belongs to the agile type of player, and once subjected to external impact, it is easy to hang, especially in the motor type field. Once the motor is blocked, the priority for pipe explosion is definitely SGT.

4. 1) Ruijun MOS has high current and correspondingly low internal resistance

2) High saturation voltage drop, high power consumption, 10 ampere current, saturation voltage drop of 1.7 volts, power consumption of 17 watts

3) The flat process is stable, and the groove (transition) new process has higher voltage resistance, lower internal resistance, and SGT internal resistance. The internal resistance of gallium nitride is more than ten times that of HaoOu 1 RuiJun MOS. The current is large, and the internal resistance is small (26 times smaller)